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| Advanced Technical Information High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM IXBH 16N170A IXBT 16N170A VCES IC25 VCE(sat) tfi(typ) = 1700 V = 16 A = 6.0 V = 50 ns Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 MW Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 33 W Clamped inductive load VGE = 15 V, VCES = 1200V, TJ = 125C RG = 33 W non repetitive TC = 25C Maximum Ratings 1700 1700 20 30 16 10 40 ICM = VCES = 40 1350 10 150 -55 ... +150 150 -55 ... +150 300 260 V V V V A A A A V ms W C C C C C g g TO-268 (IXBT) G E TO-247 AD (IXBH) G C (TAB) C E C = Collector, TAB = Collector G = Gate, E = Emitter, Features * Monolithic fast reverse diode * High Blocking Voltage * JEDEC TO-268 surface mount and JEDEC TO-247 AD packages * Low switching losses * High current handling capability * MOS Gate turn-on - drive simplicity * Molding epoxies meet UL 94 V-0 flammability classification Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering SMD devices for 10 s Md Weight Mounting torque (M3) (TO-247) TO-247 TO-268 1.13/10 Nm/lb.in. 6 4 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1700 2.5 TJ = 125C V V mA mA nA V V Applications * AC motor speed control * Uninterruptible power supplies (UPS) * Switched-mode and resonant-mode power supplies * Capacitor discharge circuits Advantages * * * * Lower conduction losses than MOSFETs High power density Suitable for surface mounting Easy to mount with 1 screw, (isolated mounting screw hole) BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250 mA, VGE = 0 V = 250 mA, VCE = VGE 5.5 50 1.5 100 6.0 VCE = 0.8 VCES VGE = 0 V; Note 1 VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V Note 2 TJ = 125C 5.0 IXYS reserves the right to change limits, test conditions, and dimensions. 98707 (02/23/00) (c) 2000 IXYS All rights reserved 1-2 IXBH 16N170A IXBT 16N170A Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 8 12.5 1400 VCE = 25 V, VGE = 0 V, f = 1 MHz 90 31 65 IC = IC90, VGE = 15 V, VCE = 0.5 VCES 13 22 Inductive load, TJ = 25C IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 10 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG Inductive load, TJ = 125C IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 10 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG 15 25 160 50 1.2 15 28 2.0 220 150 2.6 250 100 2.5 S pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ 0.83 K/W (TO-247) 0.25 K/W TO-268AA (D3 PAK) Dim. Millimeter Min. Max. A B C D E F G H J K L M N 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8 Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102 TO-247 AD Outline gfs C ies Coes C res Qg Qge Qgc td(on) t ri td(off) tfi Eoff td(on) t ri Eon td(off) tfi Eoff RthJC RthCK IC = IC90; VCE = 10 V, Pulse test, t 300 ms, duty cycle 2 % 1.5 2.49 Reverse Diode Symbol VF IRM t rr Test Conditions IF t IF vR Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 5.0 10 360 V A ns Dim. Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161 = IC90, VGE = 0 V, Pulse test, < 300 us, duty cycle d < 2% = IC90, VGE = 0 V, -diF/dt = 50 A/us = 100V Notes: 1. Device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. 2. Pulse test, t 300 ms, duty cycle 2 %. Min. Recommended Footprint A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4 (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2 |
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